Vishay Semiconductor Diodes Division - EGP10DHE3/54

KEY Part #: K6447633

[1357PC Stock]


    Nimewo Pati:
    EGP10DHE3/54
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 200V 1A DO204AL.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Transistors - JFETs, Diodes - RF, Diodes - Rèkteur - Single and Tiristors - SCR - Modil yo ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division EGP10DHE3/54 electronic components. EGP10DHE3/54 can be shipped within 24 hours after order. If you have any demands for EGP10DHE3/54, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EGP10DHE3/54 Atribi pwodwi yo

    Nimewo Pati : EGP10DHE3/54
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 200V 1A DO204AL
    Seri : SUPERECTIFIER®
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 200V
    Kouran - Mwayèn Rèktifye (Io) : 1A
    Voltage - Forward (Vf) (Max) @ Si : 950mV @ 1A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 50ns
    Kouran - Fèy Reverse @ Vr : 5µA @ 200V
    Kapasite @ Vr, F : 22pF @ 4V, 1MHz
    Mounting Kalite : Through Hole
    Pake / Ka : DO-204AL, DO-41, Axial
    Pake Aparèy Founisè : DO-204AL (DO-41)
    Operating Tanperati - Junction : -65°C ~ 150°C

    Ou ka enterese tou
    • RURD660S9A-F085

      ON Semiconductor

      DIODE GEN PURP 600V 6A DPAK. Rectifiers Ultrafast Power Rectifier, 6A 600V

    • RURD660S9A-F085P

      ON Semiconductor

      UFR DPAK PN 6A 200V. Rectifiers 6A, 600V Ultrafast Diodes

    • 1PS193,115

      NXP USA Inc.

      DIODE GEN PURP 80V 215MA SMT3.

    • 1PS193,135

      NXP USA Inc.

      DIODE GEN PURP 80V 215MA SMT3.

    • VS-8EWL06FN-M3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 600V 8A TO252AA. Rectifiers 8A 600V 60ns Hyperfast

    • EGL34GHE3/83

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 400V 500MA DO213.