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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. IXFR26N60Q

IXYS - IXFR26N60Q

KEY Part #: K6408866

IXFR26N60Q Pricing (USD) [479PC Stock]

  • 30 pcs$6.15217
Nimewo Pati:
IXFR26N60Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 600V 23A ISOPLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in IXYS IXFR26N60Q electronic components. IXFR26N60Q can be shipped within 24 hours after order. If you have any demands for IXFR26N60Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFR26N60Q Atribi pwodwi yo

Nimewo Pati : IXFR26N60Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 600V 23A ISOPLUS247
Seri : HiPerFET™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 250 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 200nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5100pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 310W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : ISOPLUS247™
Pake / Ka : ISOPLUS247™

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