Nimewo Pati :
VS-8ETH03-N3
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 300V 8A TO220AC
Voltage - DC Ranvèse (Vr) (Max) :
300V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1.25V @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
27ns
Kouran - Fèy Reverse @ Vr :
20µA @ 300V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AC
Operating Tanperati - Junction :
-65°C ~ 175°C