STMicroelectronics - STP16N65M2

KEY Part #: K6392622

STP16N65M2 Pricing (USD) [32929PC Stock]

  • 1 pcs$1.25159
  • 10 pcs$1.07410
  • 100 pcs$0.86304
  • 500 pcs$0.67124
  • 1,000 pcs$0.55617

Nimewo Pati:
STP16N65M2
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 650V 11A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in STMicroelectronics STP16N65M2 electronic components. STP16N65M2 can be shipped within 24 hours after order. If you have any demands for STP16N65M2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STP16N65M2 Atribi pwodwi yo

Nimewo Pati : STP16N65M2
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 650V 11A TO-220AB
Seri : MDmesh™ M2
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 360 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 19.5nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 718pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 110W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3