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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQB6N80TM

ON Semiconductor - FQB6N80TM

KEY Part #: K6392833

FQB6N80TM Pricing (USD) [66450PC Stock]

  • 1 pcs$1.09960
  • 10 pcs$0.99132
  • 100 pcs$0.79673
Nimewo Pati:
FQB6N80TM
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 800V 5.8A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQB6N80TM electronic components. FQB6N80TM can be shipped within 24 hours after order. If you have any demands for FQB6N80TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQB6N80TM Atribi pwodwi yo

Nimewo Pati : FQB6N80TM
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 800V 5.8A D2PAK
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.95 Ohm @ 2.9A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.13W (Ta), 158W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263AB)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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