[13356PC Stock]
- Nimewo Pati:
- NVF2955PT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P CH 60V 1.7A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NVF2955PT1G electronic components. NVF2955PT1G can be shipped within 24 hours after order. If you have any demands for NVF2955PT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVF2955PT1G Atribi pwodwi yo
Nimewo Pati :
NVF2955PT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P CH 60V 1.7A SOT223
Seri :
Automotive, AEC-Q101
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
185 mOhm @ 2.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
14.3nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
492pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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