DMN3110LCP3-7 Pricing (USD) [523372PC Stock]
- 1 pcs$0.07067
- 3,000 pcs$0.06325
- Nimewo Pati:
- DMN3110LCP3-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 30V 3.2A X2DFN1006-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN3110LCP3-7 electronic components. DMN3110LCP3-7 can be shipped within 24 hours after order. If you have any demands for DMN3110LCP3-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3110LCP3-7 Atribi pwodwi yo
Nimewo Pati :
DMN3110LCP3-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 30V 3.2A X2DFN1006-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 8V
RD sou (Max) @ Id, Vgs :
69 mOhm @ 500mA, 8V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.52nC @ 4.5V
Vgs (Max) :
12V
Antre kapasite (Ciss) (Max) @ Vds :
150pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.38W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
X2-DFN1006-3
Pake / Ka :
3-XFDFN
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