[3460PC Stock]
- Nimewo Pati:
- PHD22NQ20T,118
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 200V 21.1A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PHD22NQ20T,118 electronic components. PHD22NQ20T,118 can be shipped within 24 hours after order. If you have any demands for PHD22NQ20T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD22NQ20T,118 Atribi pwodwi yo
Nimewo Pati :
PHD22NQ20T,118
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 200V 21.1A DPAK
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
30.8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1380pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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