NXP USA Inc. - BSN254,126

KEY Part #: K6400308

[3442PC Stock]


    Nimewo Pati:
    BSN254,126
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 250V 310MA SOT54.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. BSN254,126 electronic components. BSN254,126 can be shipped within 24 hours after order. If you have any demands for BSN254,126, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSN254,126 Atribi pwodwi yo

    Nimewo Pati : BSN254,126
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 250V 310MA SOT54
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 250V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 310mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.4V, 10V
    RD sou (Max) @ Id, Vgs : 5 Ohm @ 300mA, 10V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 120pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-92-3
    Pake / Ka : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)