Microsemi Corporation - APT50GT60BRDQ2G

KEY Part #: K6422640

APT50GT60BRDQ2G Pricing (USD) [10425PC Stock]

  • 1 pcs$3.95308
  • 10 pcs$3.55777
  • 25 pcs$3.24144
  • 100 pcs$2.92515
  • 250 pcs$2.68799
  • 500 pcs$2.45080
  • 1,000 pcs$2.13457

Nimewo Pati:
APT50GT60BRDQ2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 600V 110A 446W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT50GT60BRDQ2G Atribi pwodwi yo

Nimewo Pati : APT50GT60BRDQ2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 600V 110A 446W TO247
Seri : Thunderbolt IGBT®
Estati Pati : Active
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 110A
Kouran - Pèseptè batman (Icm) : 150A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 50A
Pouvwa - Max : 446W
Oblije chanje enèji : 995µJ (on), 1070µJ (off)
Kalite Antre : Standard
Gate chaje : 240nC
Td (on / off) @ 25 ° C : 14ns/240ns
Kondisyon egzamen an : 400V, 50A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 22ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 [B]