IXYS - IXYN100N120C3H1

KEY Part #: K6532576

IXYN100N120C3H1 Pricing (USD) [2298PC Stock]

  • 1 pcs$19.73195
  • 10 pcs$18.45324
  • 25 pcs$17.06649
  • 100 pcs$15.99983

Nimewo Pati:
IXYN100N120C3H1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT XPT 1200V 134A SOT-227B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in IXYS IXYN100N120C3H1 electronic components. IXYN100N120C3H1 can be shipped within 24 hours after order. If you have any demands for IXYN100N120C3H1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXYN100N120C3H1 Atribi pwodwi yo

Nimewo Pati : IXYN100N120C3H1
Manifakti : IXYS
Deskripsyon : IGBT XPT 1200V 134A SOT-227B
Seri : XPT™, GenX3™
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 134A
Pouvwa - Max : 690W
Vce (sou) (Max) @ Vge, Ic : 3.5V @ 15V, 100A
Kouran - Cutoff Pèseptè (Max) : 50µA
Antre kapasite (Cies) @ Vce : 6nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4, miniBLOC
Pake Aparèy Founisè : SOT-227B

Ou ka enterese tou
  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.