IXYS - IXTH110N10L2

KEY Part #: K6399506

IXTH110N10L2 Pricing (USD) [6911PC Stock]

  • 1 pcs$6.55762
  • 10 pcs$5.96267
  • 100 pcs$5.06827
  • 500 pcs$4.32294

Nimewo Pati:
IXTH110N10L2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 100V 110A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXTH110N10L2 electronic components. IXTH110N10L2 can be shipped within 24 hours after order. If you have any demands for IXTH110N10L2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH110N10L2 Atribi pwodwi yo

Nimewo Pati : IXTH110N10L2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 100V 110A TO-247
Seri : Linear L2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 18 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 10500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 600W (Tc)
Operating Tanperati : -
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 (IXTH)
Pake / Ka : TO-247-3

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