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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. BFL4026-1E

ON Semiconductor - BFL4026-1E

KEY Part #: K6398180

BFL4026-1E Pricing (USD) [28253PC Stock]

  • 1 pcs$1.45872
  • 350 pcs$0.89315
Nimewo Pati:
BFL4026-1E
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 900V 3.5A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor BFL4026-1E electronic components. BFL4026-1E can be shipped within 24 hours after order. If you have any demands for BFL4026-1E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BFL4026-1E Atribi pwodwi yo

Nimewo Pati : BFL4026-1E
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 900V 3.5A
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.6 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 650pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta), 35W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220F-3FS
Pake / Ka : TO-220-3 Full Pack

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