Toshiba Semiconductor and Storage - TK11A65W,S5X

KEY Part #: K6398081

TK11A65W,S5X Pricing (USD) [45397PC Stock]

  • 1 pcs$0.94491
  • 50 pcs$0.76228
  • 100 pcs$0.68606
  • 500 pcs$0.53361
  • 1,000 pcs$0.44214

Nimewo Pati:
TK11A65W,S5X
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 650V 11.1A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK11A65W,S5X electronic components. TK11A65W,S5X can be shipped within 24 hours after order. If you have any demands for TK11A65W,S5X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK11A65W,S5X Atribi pwodwi yo

Nimewo Pati : TK11A65W,S5X
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 650V 11.1A TO-220
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 390 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 450µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 890pF @ 300V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 35W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220SIS
Pake / Ka : TO-220-3 Full Pack

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