Nimewo Pati :
TK11A65W,S5X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 650V 11.1A TO-220
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
390 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 450µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
890pF @ 300V
Disipasyon Pouvwa (Max) :
35W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack