Vishay Semiconductor Diodes Division - 10ETF10STRR

KEY Part #: K6451310

[102PC Stock]


    Nimewo Pati:
    10ETF10STRR
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 1KV 10A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division 10ETF10STRR electronic components. 10ETF10STRR can be shipped within 24 hours after order. If you have any demands for 10ETF10STRR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    10ETF10STRR Atribi pwodwi yo

    Nimewo Pati : 10ETF10STRR
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 1KV 10A D2PAK
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1000V
    Kouran - Mwayèn Rèktifye (Io) : 10A
    Voltage - Forward (Vf) (Max) @ Si : 1.33V @ 10A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 310ns
    Kouran - Fèy Reverse @ Vr : 100µA @ 1000V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : TO-263AB (D²PAK)
    Operating Tanperati - Junction : -40°C ~ 150°C

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