Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 30A DO203AB
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
30A
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 62.8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
350ns
Kouran - Fèy Reverse @ Vr :
80µA @ 100V
Mounting Kalite :
Chassis, Stud Mount
Pake / Ka :
DO-203AB, DO-5, Stud
Pake Aparèy Founisè :
DO-203AB
Operating Tanperati - Junction :
-40°C ~ 125°C