Vishay Semiconductor Diodes Division - 1N4007GPHE3/53

KEY Part #: K6446336

[1800PC Stock]


    Nimewo Pati:
    1N4007GPHE3/53
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 1KV 1A DO204AL.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division 1N4007GPHE3/53 electronic components. 1N4007GPHE3/53 can be shipped within 24 hours after order. If you have any demands for 1N4007GPHE3/53, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    1N4007GPHE3/53 Atribi pwodwi yo

    Nimewo Pati : 1N4007GPHE3/53
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 1KV 1A DO204AL
    Seri : SUPERECTIFIER®
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1000V
    Kouran - Mwayèn Rèktifye (Io) : 1A
    Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
    Vitès : Standard Recovery >500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 2µs
    Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
    Kapasite @ Vr, F : 8pF @ 4V, 1MHz
    Mounting Kalite : Through Hole
    Pake / Ka : DO-204AL, DO-41, Axial
    Pake Aparèy Founisè : DO-204AL (DO-41)
    Operating Tanperati - Junction : -65°C ~ 175°C

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