ON Semiconductor - FGD3N60LSDTM

KEY Part #: K6421771

FGD3N60LSDTM Pricing (USD) [183926PC Stock]

  • 1 pcs$0.20211
  • 2,500 pcs$0.20110
  • 5,000 pcs$0.19152

Nimewo Pati:
FGD3N60LSDTM
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 6A 40W DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - RF, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor FGD3N60LSDTM electronic components. FGD3N60LSDTM can be shipped within 24 hours after order. If you have any demands for FGD3N60LSDTM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGD3N60LSDTM Atribi pwodwi yo

Nimewo Pati : FGD3N60LSDTM
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 6A 40W DPAK
Seri : -
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 6A
Kouran - Pèseptè batman (Icm) : 25A
Vce (sou) (Max) @ Vge, Ic : 1.5V @ 10V, 3A
Pouvwa - Max : 40W
Oblije chanje enèji : 250µJ (on), 1mJ (off)
Kalite Antre : Standard
Gate chaje : 12.5nC
Td (on / off) @ 25 ° C : 40ns/600ns
Kondisyon egzamen an : 480V, 3A, 470 Ohm, 10V
Ranvèse Tan Reverse (trr) : 234ns
Operating Tanperati : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : D-Pak