IXYS - IXGT30N120B3D1

KEY Part #: K6421976

IXGT30N120B3D1 Pricing (USD) [14015PC Stock]

  • 1 pcs$3.09619
  • 30 pcs$3.08079

Nimewo Pati:
IXGT30N120B3D1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 1200V 300W TO268.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXGT30N120B3D1 electronic components. IXGT30N120B3D1 can be shipped within 24 hours after order. If you have any demands for IXGT30N120B3D1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGT30N120B3D1 Atribi pwodwi yo

Nimewo Pati : IXGT30N120B3D1
Manifakti : IXYS
Deskripsyon : IGBT 1200V 300W TO268
Seri : GenX3™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : -
Kouran - Pèseptè batman (Icm) : 150A
Vce (sou) (Max) @ Vge, Ic : 3.5V @ 15V, 30A
Pouvwa - Max : 300W
Oblije chanje enèji : 3.47mJ (on), 2.16mJ (off)
Kalite Antre : Standard
Gate chaje : 87nC
Td (on / off) @ 25 ° C : 16ns/127ns
Kondisyon egzamen an : 960V, 30A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) : 100ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè : TO-268