STGW35NB60SD Pricing (USD) [14986PC Stock]
- 1 pcs$2.57369
- 10 pcs$2.31279
- 100 pcs$1.89492
- 500 pcs$1.61309
- 1,000 pcs$1.36044
- Nimewo Pati:
- STGW35NB60SD
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 600V 70A 200W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGW35NB60SD electronic components. STGW35NB60SD can be shipped within 24 hours after order. If you have any demands for STGW35NB60SD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGW35NB60SD Atribi pwodwi yo
Nimewo Pati :
STGW35NB60SD
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 600V 70A 200W TO247
Seri :
PowerMESH™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
70A
Kouran - Pèseptè batman (Icm) :
250A
Vce (sou) (Max) @ Vge, Ic :
1.7V @ 15V, 20A
Pouvwa - Max :
200W
Oblije chanje enèji :
840µJ (on), 7.4mJ (off)
Kalite Antre :
Standard
Gate chaje :
83nC
Td (on / off) @ 25 ° C :
92ns/1.1µs
Kondisyon egzamen an :
480V, 20A, 100 Ohm, 15V
Ranvèse Tan Reverse (trr) :
44ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247-3
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