Toshiba Semiconductor and Storage - SSM6N37FE,LM

KEY Part #: K6525531

SSM6N37FE,LM Pricing (USD) [1416991PC Stock]

  • 1 pcs$0.02610

Nimewo Pati:
SSM6N37FE,LM
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET 2N-CH 20V 0.25A 2-2N1D.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM6N37FE,LM electronic components. SSM6N37FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6N37FE,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N37FE,LM Atribi pwodwi yo

Nimewo Pati : SSM6N37FE,LM
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET 2N-CH 20V 0.25A 2-2N1D
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250mA
RD sou (Max) @ Id, Vgs : 2.2 Ohm @ 100mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 12pF @ 10V
Pouvwa - Max : 150mW
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : ES6

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