Renesas Electronics America - RJH60D6DPM-00#T1

KEY Part #: K6423736

[9550PC Stock]


    Nimewo Pati:
    RJH60D6DPM-00#T1
    Manifakti:
    Renesas Electronics America
    Detaye deskripsyon:
    IGBT 600V 80A 50W TO-3PFM.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America RJH60D6DPM-00#T1 electronic components. RJH60D6DPM-00#T1 can be shipped within 24 hours after order. If you have any demands for RJH60D6DPM-00#T1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RJH60D6DPM-00#T1 Atribi pwodwi yo

    Nimewo Pati : RJH60D6DPM-00#T1
    Manifakti : Renesas Electronics America
    Deskripsyon : IGBT 600V 80A 50W TO-3PFM
    Seri : -
    Estati Pati : Active
    Kalite IGBT : Trench
    Voltage - Pèseptè ki emèt deba (Max) : 600V
    Kouran - Pèseptè (Ic) (Max) : 80A
    Kouran - Pèseptè batman (Icm) : -
    Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 40A
    Pouvwa - Max : 50W
    Oblije chanje enèji : 850µJ (on), 600µJ (off)
    Kalite Antre : Standard
    Gate chaje : 104nC
    Td (on / off) @ 25 ° C : 50ns/160ns
    Kondisyon egzamen an : 300V, 40A, 5 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 100ns
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-3PFM, SC-93-3
    Pake Aparèy Founisè : TO-3PFM