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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDV303N

ON Semiconductor - FDV303N

KEY Part #: K6419988

FDV303N Pricing (USD) [1235584PC Stock]

  • 1 pcs$0.02994
  • 3,000 pcs$0.02292
Nimewo Pati:
FDV303N
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 25V 680MA SOT-23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Single, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Diodes - RF, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDV303N electronic components. FDV303N can be shipped within 24 hours after order. If you have any demands for FDV303N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDV303N Atribi pwodwi yo

Nimewo Pati : FDV303N
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 25V 680MA SOT-23
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 680mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.7V, 4.5V
RD sou (Max) @ Id, Vgs : 450 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 2.3nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 350mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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