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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - IGBTs - Single
  5. HGTP3N60A4D

ON Semiconductor - HGTP3N60A4D

KEY Part #: K6424899

HGTP3N60A4D Pricing (USD) [66382PC Stock]

  • 1 pcs$0.59197
  • 800 pcs$0.58902
Nimewo Pati:
HGTP3N60A4D
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 17A 70W TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor HGTP3N60A4D electronic components. HGTP3N60A4D can be shipped within 24 hours after order. If you have any demands for HGTP3N60A4D, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGTP3N60A4D Atribi pwodwi yo

Nimewo Pati : HGTP3N60A4D
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 17A 70W TO220AB
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 17A
Kouran - Pèseptè batman (Icm) : 40A
Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 3A
Pouvwa - Max : 70W
Oblije chanje enèji : 37µJ (on), 25µJ (off)
Kalite Antre : Standard
Gate chaje : 21nC
Td (on / off) @ 25 ° C : 6ns/73ns
Kondisyon egzamen an : 390V, 3A, 50 Ohm, 15V
Ranvèse Tan Reverse (trr) : 29ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220-3

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