HGTP3N60A4D Pricing (USD) [66382PC Stock]
- 1 pcs$0.59197
- 800 pcs$0.58902
- Nimewo Pati:
- HGTP3N60A4D
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 600V 17A 70W TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGTP3N60A4D electronic components. HGTP3N60A4D can be shipped within 24 hours after order. If you have any demands for HGTP3N60A4D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTP3N60A4D Atribi pwodwi yo
Nimewo Pati :
HGTP3N60A4D
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 600V 17A 70W TO220AB
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
17A
Kouran - Pèseptè batman (Icm) :
40A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 3A
Pouvwa - Max :
70W
Oblije chanje enèji :
37µJ (on), 25µJ (off)
Kalite Antre :
Standard
Gate chaje :
21nC
Td (on / off) @ 25 ° C :
6ns/73ns
Kondisyon egzamen an :
390V, 3A, 50 Ohm, 15V
Ranvèse Tan Reverse (trr) :
29ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220-3
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