GPA020A120MN-FD Pricing (USD) [58596PC Stock]
- 1 pcs$0.67062
- 2,500 pcs$0.66729
- Nimewo Pati:
- GPA020A120MN-FD
- Manifakti:
- Global Power Technologies Group
- Detaye deskripsyon:
- IGBT 1200V 40A 223W TO3PN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Global Power Technologies Group GPA020A120MN-FD electronic components. GPA020A120MN-FD can be shipped within 24 hours after order. If you have any demands for GPA020A120MN-FD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GPA020A120MN-FD Atribi pwodwi yo
Nimewo Pati :
GPA020A120MN-FD
Manifakti :
Global Power Technologies Group
Deskripsyon :
IGBT 1200V 40A 223W TO3PN
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
40A
Kouran - Pèseptè batman (Icm) :
60A
Vce (sou) (Max) @ Vge, Ic :
2.5V @ 15V, 20A
Pouvwa - Max :
223W
Oblije chanje enèji :
2.8mJ (on), 480µJ (off)
Kalite Antre :
Standard
Gate chaje :
210nC
Td (on / off) @ 25 ° C :
30ns/150ns
Kondisyon egzamen an :
600V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
425ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3
Pake Aparèy Founisè :
TO-3PN
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