Global Power Technologies Group - GPA020A120MN-FD

KEY Part #: K6424890

GPA020A120MN-FD Pricing (USD) [58596PC Stock]

  • 1 pcs$0.67062
  • 2,500 pcs$0.66729

Nimewo Pati:
GPA020A120MN-FD
Manifakti:
Global Power Technologies Group
Detaye deskripsyon:
IGBT 1200V 40A 223W TO3PN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GPA020A120MN-FD Atribi pwodwi yo

Nimewo Pati : GPA020A120MN-FD
Manifakti : Global Power Technologies Group
Deskripsyon : IGBT 1200V 40A 223W TO3PN
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 40A
Kouran - Pèseptè batman (Icm) : 60A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Pouvwa - Max : 223W
Oblije chanje enèji : 2.8mJ (on), 480µJ (off)
Kalite Antre : Standard
Gate chaje : 210nC
Td (on / off) @ 25 ° C : 30ns/150ns
Kondisyon egzamen an : 600V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 425ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-3
Pake Aparèy Founisè : TO-3PN