Infineon Technologies - IPP072N10N3GHKSA1

KEY Part #: K6402307

[2749PC Stock]


    Nimewo Pati:
    IPP072N10N3GHKSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 100V 80A TO220-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPP072N10N3GHKSA1 electronic components. IPP072N10N3GHKSA1 can be shipped within 24 hours after order. If you have any demands for IPP072N10N3GHKSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP072N10N3GHKSA1 Atribi pwodwi yo

    Nimewo Pati : IPP072N10N3GHKSA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 100V 80A TO220-3
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
    RD sou (Max) @ Id, Vgs : 7.2 mOhm @ 80A, 10V
    Vgs (th) (Max) @ Id : 3.5V @ 90µA
    Chaje Gate (Qg) (Max) @ Vgs : 68nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 4910pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 150W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : PG-TO220-3
    Pake / Ka : TO-220-3