Infineon Technologies - IRFI1310NPBF

KEY Part #: K6402268

IRFI1310NPBF Pricing (USD) [44532PC Stock]

  • 1 pcs$0.80275
  • 10 pcs$0.72331
  • 100 pcs$0.58116
  • 500 pcs$0.45200
  • 1,000 pcs$0.37451

Nimewo Pati:
IRFI1310NPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 24A TO220FP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFI1310NPBF electronic components. IRFI1310NPBF can be shipped within 24 hours after order. If you have any demands for IRFI1310NPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFI1310NPBF Atribi pwodwi yo

Nimewo Pati : IRFI1310NPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 24A TO220FP
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 36 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 56W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB Full-Pak
Pake / Ka : TO-220-3 Full Pack