NVMFS5C442NLAFT1G Pricing (USD) [198663PC Stock]
- 1 pcs$0.20659
- 1,500 pcs$0.20556
- Nimewo Pati:
- NVMFS5C442NLAFT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 40V 29A 130A 5DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - JFETs, Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NVMFS5C442NLAFT1G electronic components. NVMFS5C442NLAFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS5C442NLAFT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS5C442NLAFT1G Atribi pwodwi yo
Nimewo Pati :
NVMFS5C442NLAFT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 40V 29A 130A 5DFN
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
29A (Ta), 130A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.5 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3100pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.7W (Ta), 83W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
5-DFN (5x6) (8-SOFL)
Pake / Ka :
8-PowerTDFN, 5 Leads
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