SIHA17N80E-E3 Pricing (USD) [17382PC Stock]
- 1 pcs$2.37097
- 10 pcs$2.11624
- 100 pcs$1.73512
- 500 pcs$1.40504
- 1,000 pcs$1.18497
- Nimewo Pati:
- SIHA17N80E-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CHANNEL 800V 15A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIHA17N80E-E3 electronic components. SIHA17N80E-E3 can be shipped within 24 hours after order. If you have any demands for SIHA17N80E-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHA17N80E-E3 Atribi pwodwi yo
Nimewo Pati :
SIHA17N80E-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHANNEL 800V 15A TO220
Seri :
E
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
290 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
122nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
2408pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
35W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220 Full Pack
Pake / Ka :
TO-220-3 Full Pack
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