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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. VN2110K1-G

Microchip Technology - VN2110K1-G

KEY Part #: K6405186

VN2110K1-G Pricing (USD) [252214PC Stock]

  • 1 pcs$0.15025
  • 3,000 pcs$0.14950
Nimewo Pati:
VN2110K1-G
Manifakti:
Microchip Technology
Detaye deskripsyon:
MOSFET N-CH 100V 0.2A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - RF, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Microchip Technology VN2110K1-G electronic components. VN2110K1-G can be shipped within 24 hours after order. If you have any demands for VN2110K1-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VN2110K1-G Atribi pwodwi yo

Nimewo Pati : VN2110K1-G
Manifakti : Microchip Technology
Deskripsyon : MOSFET N-CH 100V 0.2A SOT23-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200mA (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 2.4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360mW (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3
Pake / Ka : TO-236-3, SC-59, SOT-23-3
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