FDG312P Pricing (USD) [596208PC Stock]
- 1 pcs$0.06235
- 3,000 pcs$0.06204
- Nimewo Pati:
- FDG312P
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 1.2A SC70-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDG312P electronic components. FDG312P can be shipped within 24 hours after order. If you have any demands for FDG312P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDG312P Atribi pwodwi yo
Nimewo Pati :
FDG312P
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 1.2A SC70-6
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
180 mOhm @ 1.2A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
330pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
750mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-88 (SC-70-6)
Pake / Ka :
6-TSSOP, SC-88, SOT-363
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