Infineon Technologies - IRLMS6702TRPBF

KEY Part #: K6405235

IRLMS6702TRPBF Pricing (USD) [445573PC Stock]

  • 1 pcs$0.08301
  • 3,000 pcs$0.07687

Nimewo Pati:
IRLMS6702TRPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET P-CH 20V 2.4A 6-TSOP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - Objektif espesyal, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLMS6702TRPBF Atribi pwodwi yo

Nimewo Pati : IRLMS6702TRPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET P-CH 20V 2.4A 6-TSOP
Seri : HEXFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.7V, 4.5V
RD sou (Max) @ Id, Vgs : 200 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ Id : 700mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.8nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 210pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.7W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Micro6™(TSOP-6)
Pake / Ka : SOT-23-6

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