Vishay Semiconductor Diodes Division - RS3J-E3/57T

KEY Part #: K6452605

RS3J-E3/57T Pricing (USD) [265052PC Stock]

  • 1 pcs$0.13955
  • 850 pcs$0.13265
  • 1,700 pcs$0.10251
  • 2,550 pcs$0.09346
  • 5,950 pcs$0.08743
  • 21,250 pcs$0.08140

Nimewo Pati:
RS3J-E3/57T
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 3A DO214AB. Rectifiers 3.0 Amp 600V 250ns
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RS3J-E3/57T electronic components. RS3J-E3/57T can be shipped within 24 hours after order. If you have any demands for RS3J-E3/57T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS3J-E3/57T Atribi pwodwi yo

Nimewo Pati : RS3J-E3/57T
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 3A DO214AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 2.5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 250ns
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 34pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 150°C

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