Infineon Technologies - BSC032NE2LSATMA1

KEY Part #: K6420753

BSC032NE2LSATMA1 Pricing (USD) [245863PC Stock]

  • 1 pcs$0.15044
  • 5,000 pcs$0.14660

Nimewo Pati:
BSC032NE2LSATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 25V 22A TDSON-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC032NE2LSATMA1 Atribi pwodwi yo

Nimewo Pati : BSC032NE2LSATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 25V 22A TDSON-8
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Ta), 84A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1200pF @ 12V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.8W (Ta), 78W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TDSON-8
Pake / Ka : 8-PowerTDFN