Infineon Technologies - IPP60R125C6XKSA1

KEY Part #: K6398857

IPP60R125C6XKSA1 Pricing (USD) [15560PC Stock]

  • 1 pcs$2.64861

Nimewo Pati:
IPP60R125C6XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 600V 30A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Diodes - RF, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP60R125C6XKSA1 Atribi pwodwi yo

Nimewo Pati : IPP60R125C6XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 600V 30A TO220
Seri : CoolMOS™
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 125 mOhm @ 14.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 960µA
Chaje Gate (Qg) (Max) @ Vgs : 96nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2127pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 219W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3
Pake / Ka : TO-220-3