IXYS - IXTH76P10T

KEY Part #: K6400025

IXTH76P10T Pricing (USD) [15330PC Stock]

  • 1 pcs$3.09371
  • 10 pcs$2.76231
  • 100 pcs$2.26493
  • 500 pcs$1.83403
  • 1,000 pcs$1.54677

Nimewo Pati:
IXTH76P10T
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET P-CH 100V 76A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - RF, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - Zener - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in IXYS IXTH76P10T electronic components. IXTH76P10T can be shipped within 24 hours after order. If you have any demands for IXTH76P10T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH76P10T Atribi pwodwi yo

Nimewo Pati : IXTH76P10T
Manifakti : IXYS
Deskripsyon : MOSFET P-CH 100V 76A TO-247
Seri : TrenchP™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 76A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 197nC @ 10V
Vgs (Max) : ±15V
Antre kapasite (Ciss) (Max) @ Vds : 13700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 298W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 (IXTH)
Pake / Ka : TO-247-3