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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. APTC80H29T1G

Microsemi Corporation - APTC80H29T1G

KEY Part #: K6524327

[3869PC Stock]

    Nimewo Pati:
    APTC80H29T1G
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET 4N-CH 800V 15A SP1.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Diodes - RF and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTC80H29T1G electronic components. APTC80H29T1G can be shipped within 24 hours after order. If you have any demands for APTC80H29T1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTC80H29T1G Atribi pwodwi yo

    Nimewo Pati : APTC80H29T1G
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET 4N-CH 800V 15A SP1
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 4 N-Channel (H-Bridge)
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 800V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A
    RD sou (Max) @ Id, Vgs : 290 mOhm @ 7.5A, 10V
    Vgs (th) (Max) @ Id : 3.9V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 90nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 2254pF @ 25V
    Pouvwa - Max : 156W
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake / Ka : SP1
    Pake Aparèy Founisè : SP1

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