IXYS - IXTA180N10T

KEY Part #: K6399089

IXTA180N10T Pricing (USD) [22589PC Stock]

  • 1 pcs$2.00959
  • 10 pcs$1.79365
  • 100 pcs$1.47079
  • 500 pcs$1.19098
  • 1,000 pcs$0.95293

Nimewo Pati:
IXTA180N10T
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 100V 180A TO-263.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in IXYS IXTA180N10T electronic components. IXTA180N10T can be shipped within 24 hours after order. If you have any demands for IXTA180N10T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA180N10T Atribi pwodwi yo

Nimewo Pati : IXTA180N10T
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 100V 180A TO-263
Seri : TrenchMV™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 6.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 151nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 6900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 480W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXTA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB