Infineon Technologies - 64-0055PBF

KEY Part #: K6412313

[13488PC Stock]


    Nimewo Pati:
    64-0055PBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH TO-220AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies 64-0055PBF electronic components. 64-0055PBF can be shipped within 24 hours after order. If you have any demands for 64-0055PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    64-0055PBF Atribi pwodwi yo

    Nimewo Pati : 64-0055PBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH TO-220AB
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 160A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 4.2 mOhm @ 75A, 10V
    Vgs (th) (Max) @ Id : 4V @ 150µA
    Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 4520pF @ 50V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 230W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : -
    Pake / Ka : -