Vishay Semiconductor Diodes Division - NSB8MT-E3/45

KEY Part #: K6437741

NSB8MT-E3/45 Pricing (USD) [176315PC Stock]

  • 1 pcs$0.20978
  • 1,000 pcs$0.19099

Nimewo Pati:
NSB8MT-E3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1KV 8A TO263AB. Rectifiers 1000 Volt 8.0 Amp 125 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Tiristors - SCR and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division NSB8MT-E3/45 electronic components. NSB8MT-E3/45 can be shipped within 24 hours after order. If you have any demands for NSB8MT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSB8MT-E3/45 Atribi pwodwi yo

Nimewo Pati : NSB8MT-E3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1KV 8A TO263AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 8A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10µA @ 1000V
Kapasite @ Vr, F : 55pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB
Operating Tanperati - Junction : -55°C ~ 150°C

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