Nimewo Pati :
CLH02(TE16L,Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
DIODE GEN PURP 300V 3A L-FLAT
Voltage - DC Ranvèse (Vr) (Max) :
300V
Kouran - Mwayèn Rèktifye (Io) :
3A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
35ns
Kouran - Fèy Reverse @ Vr :
10µA @ 300V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
L-FLAT™ (4x5.5)
Operating Tanperati - Junction :
-40°C ~ 150°C