Infineon Technologies - IRG7PH50K10D-EPBF

KEY Part #: K6423720

[9556PC Stock]


    Nimewo Pati:
    IRG7PH50K10D-EPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 1200V 90A 400W TO247AD.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRG7PH50K10D-EPBF electronic components. IRG7PH50K10D-EPBF can be shipped within 24 hours after order. If you have any demands for IRG7PH50K10D-EPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRG7PH50K10D-EPBF Atribi pwodwi yo

    Nimewo Pati : IRG7PH50K10D-EPBF
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 1200V 90A 400W TO247AD
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 90A
    Kouran - Pèseptè batman (Icm) : 160A
    Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 35A
    Pouvwa - Max : 400W
    Oblije chanje enèji : 2.3mJ (on), 1.6mJ (off)
    Kalite Antre : Standard
    Gate chaje : 300nC
    Td (on / off) @ 25 ° C : 90ns/340ns
    Kondisyon egzamen an : 600V, 35A, 5 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 130ns
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-3
    Pake Aparèy Founisè : TO-247AD