Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 800V 4A I2PAKFP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.75 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
5.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
177pF @ 100V
Disipasyon Pouvwa (Max) :
20W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAKFP (TO-281)
Pake / Ka :
TO-262-3 Full Pack, I²Pak