[12451PC Stock]
- Nimewo Pati:
- PMN34LN,135
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 5.7A 6TSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMN34LN,135 electronic components. PMN34LN,135 can be shipped within 24 hours after order. If you have any demands for PMN34LN,135, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMN34LN,135 Atribi pwodwi yo
Nimewo Pati :
PMN34LN,135
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 20V 5.7A 6TSOP
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
34 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
13.1nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
500pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.75W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-TSOP
Pake / Ka :
SC-74, SOT-457
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