Keystone Electronics - 4336

KEY Part #: K7359552

4336 Pricing (USD) [217491PC Stock]

  • 1 pcs$0.18588
  • 10 pcs$0.17481
  • 50 pcs$0.12751
  • 100 pcs$0.12249
  • 250 pcs$0.10998
  • 500 pcs$0.10498
  • 1,000 pcs$0.08748
  • 2,500 pcs$0.07999
  • 5,000 pcs$0.07499

Nimewo Pati:
4336
Manifakti:
Keystone Electronics
Detaye deskripsyon:
BRACKET UNIVERSAL CLEAR HOLE. Cable Mounting & Accessories WCLP 750 NATURAL LOCK REL WIRE CLIP
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Pwodwi pou Telefòn, Bi, Pistach, Estriktirèl, Materyèl Mouvman, Bumpers, Mèt, kousinen, ponyèt, Spacers Komisyon Konsèy, standoffs, Posiblite resleyabl and Vis krich ...
Avantaj konpetitif:
We specialize in Keystone Electronics 4336 electronic components. 4336 can be shipped within 24 hours after order. If you have any demands for 4336, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

4336 Atribi pwodwi yo

Nimewo Pati : 4336
Manifakti : Keystone Electronics
Deskripsyon : BRACKET UNIVERSAL CLEAR HOLE
Seri : -
Estati Pati : Active
Kalite : Bracket, Non-Threaded Hole(s)
Fòm : Short L
Thread / Vis / gwosè twou : 0.144" (3.66mm) (2)
Materyèl : Steel, Nickel Plated

Ou ka enterese tou
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.