Taiwan Semiconductor Corporation - RS1JLHRHG

KEY Part #: K6438206

RS1JLHRHG Pricing (USD) [2000457PC Stock]

  • 1 pcs$0.01849

Nimewo Pati:
RS1JLHRHG
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 600V 800MA SUBSMA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation RS1JLHRHG electronic components. RS1JLHRHG can be shipped within 24 hours after order. If you have any demands for RS1JLHRHG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1JLHRHG Atribi pwodwi yo

Nimewo Pati : RS1JLHRHG
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 600V 800MA SUBSMA
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 800mA
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 800mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 250ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 10pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-219AB
Pake Aparèy Founisè : Sub SMA
Operating Tanperati - Junction : -55°C ~ 150°C

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