ON Semiconductor - FGA50N100BNTDTU

KEY Part #: K6422908

FGA50N100BNTDTU Pricing (USD) [19523PC Stock]

  • 1 pcs$2.11095
  • 450 pcs$1.49570

Nimewo Pati:
FGA50N100BNTDTU
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 1000V 50A 156W TO3P.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in ON Semiconductor FGA50N100BNTDTU electronic components. FGA50N100BNTDTU can be shipped within 24 hours after order. If you have any demands for FGA50N100BNTDTU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGA50N100BNTDTU Atribi pwodwi yo

Nimewo Pati : FGA50N100BNTDTU
Manifakti : ON Semiconductor
Deskripsyon : IGBT 1000V 50A 156W TO3P
Seri : -
Estati Pati : Active
Kalite IGBT : NPT and Trench
Voltage - Pèseptè ki emèt deba (Max) : 1000V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 100A
Vce (sou) (Max) @ Vge, Ic : 2.9V @ 15V, 60A
Pouvwa - Max : 156W
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : 275nC
Td (on / off) @ 25 ° C : -
Kondisyon egzamen an : -
Ranvèse Tan Reverse (trr) : 1.5µs
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-3P-3, SC-65-3
Pake Aparèy Founisè : TO-3P