RQ3E080BNTB Pricing (USD) [880615PC Stock]
- 1 pcs$0.04643
- 3,000 pcs$0.04620
- Nimewo Pati:
- RQ3E080BNTB
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 8A HSMT8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RQ3E080BNTB electronic components. RQ3E080BNTB can be shipped within 24 hours after order. If you have any demands for RQ3E080BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E080BNTB Atribi pwodwi yo
Nimewo Pati :
RQ3E080BNTB
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 30V 8A HSMT8
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
15.2 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
660pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-HSMT (3.2x3)
Pake / Ka :
8-PowerVDFN
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