Infineon Technologies - FP50R12KT4B11BOSA1

KEY Part #: K6533260

FP50R12KT4B11BOSA1 Pricing (USD) [874PC Stock]

  • 1 pcs$53.08604

Nimewo Pati:
FP50R12KT4B11BOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT MODULE 1200V 50A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Infineon Technologies FP50R12KT4B11BOSA1 electronic components. FP50R12KT4B11BOSA1 can be shipped within 24 hours after order. If you have any demands for FP50R12KT4B11BOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FP50R12KT4B11BOSA1 Atribi pwodwi yo

Nimewo Pati : FP50R12KT4B11BOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT MODULE 1200V 50A
Seri : *
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Pouvwa - Max : 280W
Vce (sou) (Max) @ Vge, Ic : 2.15V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) : 1mA
Antre kapasite (Cies) @ Vce : 2.8nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module

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