IXFN80N60P3 Pricing (USD) [4410PC Stock]
- 1 pcs$10.80416
- 10 pcs$9.99384
- 100 pcs$8.53528
- Nimewo Pati:
- IXFN80N60P3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 66A SOT-227B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN80N60P3 electronic components. IXFN80N60P3 can be shipped within 24 hours after order. If you have any demands for IXFN80N60P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN80N60P3 Atribi pwodwi yo
Nimewo Pati :
IXFN80N60P3
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 66A SOT-227B
Seri :
HiPerFET™, Polar3™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
66A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
70 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
13100pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
960W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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